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electron traps in Chinese

Pronunciation:
How to pronounce "electron traps""electron traps" in a sentence

Translationmobile phoneMobile

  • 電子陷阱

Examples

  • Application of electron trapping material in image information processing
    電子俘獲材料在光信息處理中的應(yīng)用
  • Electron trapping center
    電子俘獲中心
  • So people call this kind material as electron trapping infrared up - conversion and optical storage material , too
    故人們又根據(jù)其特性稱之為電子俘獲型紅外上轉(zhuǎn)換及光存儲(chǔ)材料( etm ? electrontrappinginfraredup - conversionandopticalstoragematerials ) 。
  • We modified the electron trapping theory to be consistent with our simulation results . 2 . in the mp - lwfa simulation , we studied the influence of multiple pulses with various arrangements of the position of the pulses
    在mp - lwfa中，我們研究不同的脈沖長(zhǎng)度、不同的脈沖間隔對(duì)產(chǎn)生尾流場(chǎng)的影響，著重討論尾流場(chǎng)的飽和機(jī)制。
  • As shallow electron traps ( sets ) dopants , the action of k4fe ( cn ) 6 that can increase photoelectron lifetime and photographic efficiency is analyzed . optimization concentration of k4fe ( cn ) 6 in cubic agcl emulsion is affirmed
    分析了k _ 4fe ( cn ) _ 6摻雜物作為一種淺電子陷阱摻雜劑對(duì)于提高光電子壽命、改善感光性能的作用機(jī)理。
  • The luminescence theorem of aluminates strontium is studied , too . ce transfers energy to tb in ce and tb co - activated phosphors . light emission of phosphors is led by 4f - 4f - electron leap of tb ; its long lasting persistence is related to electron traps in sraljo , host lattice
    鉚對(duì)錨有能量傳遞和敏化作用，該磷光體的光發(fā)射是锨的4f 4ffh于躍遷發(fā)射的結(jié)果：其余輝特性與鋁酸鋸晶格的電子陷階等有關(guān)。
  • The total number of defects induced by electron irradiation in 4h - sic is calculated theoretically . the deep level defect of eh6 / eh7 is considered to play the most important role in carrier recombination from the comparison of all kinds of possible electron traps
    在輻照的位移效應(yīng)方面：從理論上對(duì)電子輻照在4h - sic中引入的缺陷數(shù)量和各種缺陷能級(jí)進(jìn)行了計(jì)算和分析，其中只有eh6 / eh7缺陷能級(jí)在sic中起著有效的復(fù)合中心的作用。
  • To analysis the principle of degradation and destruction , a reasonable relationship between the electrostatic potential and 1 - v characteristic parameters is raised ; a computation model for electron trap effect is originally proposed , which leads to a conception of critical trap electron density
    本文首次建立了晶界勢(shì)壘高度與伏安特性參數(shù)之間的關(guān)系，提出了陷阱效應(yīng)在沖擊老化過(guò)程的作用模型，引入了“臨界陷阱電荷密度”的概念。
  • We found the " forward stimulated raman scattering " will be excited if the pulse length is greater than plasma wave length . the " forward stimulation raman scattering " decreases the phase velocity and the amplitude of the wake wave which will lead to the reduction of maximum kinetic energy of the electrons trapped
    結(jié)論是：當(dāng)脈沖長(zhǎng)度接近等離子體波長(zhǎng)時(shí)，稀薄等離子體將發(fā)生“前向受激raman散射” ，它使脈沖后沿拉長(zhǎng)，導(dǎo)致尾流場(chǎng)的相速度變小，以至于被尾流場(chǎng)“捕獲”的電子最大動(dòng)能大大下降。
  • The systematically study of the preparation of alkaline earth sulfide system doped with rare earth and its optical storage properties not only expand new synthesize technology of electron trapping optical storage materials but also afford basis for improving materials properties and application in different application fields
    稀土摻雜硫化物體系的制備及其光學(xué)性能的系統(tǒng)研究，不但為電子俘獲型光存儲(chǔ)材料拓展了新的合成技術(shù)，也為進(jìn)一步提高材料的性能及其在不同領(lǐng)域的應(yīng)用提供了依據(jù)。
  • More examples：  1  2
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